Microchip Technology, Inc. Single Bipolar Transistors 2N2432AUB/TR

NPN silicon low power transistor in UB package with collector-emitter voltage rating of 45 Vdc, collector current of 100 mAdc, and power dissipation of 360 mW. Thermal resistance junction-to-solder pads is 95 °C/W. Operating and storage junction temperature range is -65 to +200 °C. Qualified per MIL-PRF-19500/313. Package dimensions conform to TO-18 (TO-206AA) surface mount format with three leads, where collector is internally connected to the case.