Microchip Technology, Inc. Single Bipolar Transistors 2N2219AP

NPN silicon switching transistor in TO-39 package with a collector-emitter voltage rating of 50 V, collector current of 800 mA, and total power dissipation of 3.0 W at +25°C. Operating and storage junction temperature range is -55 to +200°C. Thermal resistance junction-to-case is 59°C/W. Qualified per MIL-PRF-19500/251. Collector-emitter saturation voltage is 0.3 V at 150 mA collector current and 15 mA base current. Forward current transfer ratio ranges from 50 to 325 at 1.0 mA collector current and 10 V collector-emitter voltage. Turn-on time is 35 μs and turn-off time is 300 μs. The collector is internally connected to the case.