The 2N2219A is an NPN silicon switching transistor in a TO-39 (TO-205AD) package, rated for a collector-emitter voltage of 50 Vdc, collector-base voltage of 75 Vdc, and collector current of 800 mA. It dissipates 0.8 W at +25°C and 3.0 W with heatsinking, with a junction temperature range of -55 to +200°C. Thermal resistance from junction to case is 59 °C/W. Electrical characteristics include a forward current transfer ratio (hFE) of 75 to 325 at 1.0 mA collector current and 100 to 300 at 150 mA, collector-emitter saturation voltage of 0.3 Vdc at 150 mA collector current and 15 mA base current, and base-emitter saturation voltage of 0.6 to 1.2 Vdc under the same conditions. It meets MIL-PRF-19500/251 qualification standards.
Bipolar (BJT) Transistor NPN 50V 800mA 800mW Through Hole TO-39 (TO-205AD)
| DigiKey | |
|---|---|
| Product Category | Transistors |
| Product Number | 2N2219AMS-ND |
| Product Name | Single Bipolar Transistors |
| Polarity | NPN |