NPN silicon transistor for switching and amplification applications in TO-39 (TO-205AD) package. Collector-emitter voltage is 30 Vdc, collector current is 500 mAdc, and total power dissipation at +25°C is 0.8 W. Operating and storage junction temperature ranges from -65°C to +200°C. Thermal resistance junction-to-case is 58°C/W. Qualified to MIL-PRF-19500/181. Collector is electrically connected to the case. Pinout: emitter (lead 1), base (lead 2), collector (lead 3).
Bipolar (BJT) Transistor NPN 30V 500mA 800mW Through Hole TO-39 (TO-205AD)
| DigiKey | |
|---|---|
| Product Category | Transistors |
| Product Number | 2N1613MS-ND |
| Product Name | Single Bipolar Transistors |
| Polarity | NPN |
