Microchip Technology, Inc. Single Bipolar Transistors 2N1489

The 2N1489 is a NPN high-power silicon transistor in a TO-33 (TO-204AA) package, rated for a collector-emitter voltage of 55 Vdc, collector-base voltage of 100 Vdc, and collector current of 6.0 Adc. It supports a total power dissipation of 75 W at 25°C with a thermal resistance of 2.33°C/W. The device operates within a junction and storage temperature range of -65°C to +200°C. Electrical characteristics include a forward-current transfer ratio (hFE) of 25 to 75, collector-emitter saturation voltage of 1.0 Vdc at 1.5 Adc collector current and 100 mA base current, and base-emitter voltage of 2.0 Vdc. The small-signal cutoff frequency is 500 kHz and the output capacitance is 700 pF. Performance is qualified per MIL-PRF-19500/208.