Microchip Technology, Inc. Memory 25LC512-I/S16K

Description
EEPROM Memory IC 512Kbit SPI 20 MHz Die
Description
EEPROM Memory IC 512Kbit SPI 20 MHz Die
Datasheet
Datasheet Summary
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The 25LC512-I/S16K from Quarktwin Technology Ltd. is a 512 Kbit SPI Bus Serial EEPROM designed for applications requiring reliable non-volatile memory storage. It operates within a supply voltage range of 2.5V to 5.5V and supports a maximum clock speed of 20 MHz. The device features byte and page-level write operations with a maximum write time of 5 ms for 128-byte pages, eliminating the need for page or sector erase prior to writing. This EEPROM utilizes low-power CMOS technology, with a maximum write current of 5 mA and a read current of 10 mA at 5.5V. In deep power-down mode, the standby current is as low as 1 ¬µA. The device includes built-in write protection mechanisms, such as a write-protect pin and power-on/off data protection circuitry, enhancing data integrity. The 25LC512-I/S16K is rated for high reliability, with an endurance of 1 million erase/write cycles and a data retention period exceeding 200 years. It is available in multiple package types, including 8-Lead DFN-S, PDIP, SOIC, and SOIJ, and is compliant with RoHS standards. Additionally, it is qualified for automotive applications under AEC-Q100, making it suitable for industrial and automotive environments with temperature ranges from -40¬8C to +125¬8C.

Datasheet Summary
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The 25LC512-I/S16K from Quarktwin Technology Ltd. is a 512 Kbit SPI Bus Serial EEPROM designed for applications requiring reliable non-volatile memory storage. It operates within a supply voltage range of 2.5V to 5.5V and supports a maximum clock speed of 20 MHz. The device features byte and page-level write operations with a maximum write time of 5 ms for 128-byte pages, eliminating the need for page or sector erase prior to writing. This EEPROM utilizes low-power CMOS technology, with a maximum write current of 5 mA and a read current of 10 mA at 5.5V. In deep power-down mode, the standby current is as low as 1 ¬µA. The device includes built-in write protection mechanisms, such as a write-protect pin and power-on/off data protection circuitry, enhancing data integrity. The 25LC512-I/S16K is rated for high reliability, with an endurance of 1 million erase/write cycles and a data retention period exceeding 200 years. It is available in multiple package types, including 8-Lead DFN-S, PDIP, SOIC, and SOIJ, and is compliant with RoHS standards. Additionally, it is qualified for automotive applications under AEC-Q100, making it suitable for industrial and automotive environments with temperature ranges from -40¬8C to +125¬8C.

Suppliers

Company
Product
Description
Supplier Links
Memory - 25LC512-I/S16K - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
EEPROM Memory IC 512Kbit SPI 20 MHz Die

EEPROM Memory IC 512Kbit SPI 20 MHz Die

Buy Now Datasheet
IC EEPROM 512KBIT SPI 20MHZ DIE

IC EEPROM 512KBIT SPI 20MHZ DIE

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - 25LC512-I/S16K - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
25LC512-I/S16K
Integrated Circuits (ICs) - Memory 25LC512-I/S16K
IC EEPROM 512KBIT SPI 20MHZ DIE

IC EEPROM 512KBIT SPI 20MHZ DIE

Supplier's Site

Technical Specifications

  Quarktwin Technology Ltd. Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number 25LC512-I/S16K 25LC512-I/S16K 25LC512-I/S16K
Product Name Memory Memory Integrated Circuits (ICs) - Memory
Memory Category EEPROM; EEPROM EEPROM; EEPROM EEPROM; Non-Volatile
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Density 512 kbits 512 kbits 512 kbits
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