Microchip Technology, Inc. Memory 25LC080CT-E/MNY

Description
EEPROM Memory IC 8Kb (1K x 8) SPI 10MHz 8-TDFN (2x3)
Request a Quote
Description
EEPROM Memory IC 8Kb (1K x 8) SPI 10MHz 8-TDFN (2x3)
Request a Quote
Datasheet
Datasheet Summary
Powered by GS/AI

The 25LC080CT-E/MNY is an 8 Kbit Serial Electrically Erasable PROM (EEPROM) from Lingto Electronic Limited, designed for use with a Serial Peripheral Interface (SPI). It operates within a voltage range of 2.5V to 5.5V and supports a maximum clock frequency of 10 MHz. The memory is organized as 1024 x 8 bits and features a 16-byte page size for efficient data writing. This device incorporates low-power CMOS technology, with a maximum write current of 5 mA and a read current of 5 mA at 5.5V. It has a standby current of only 5 ¬µA, making it suitable for power-sensitive applications. The EEPROM supports self-timed erase and write cycles, with a maximum duration of 5 ms, and includes block write protection options. The 25LC080CT-E/MNY is rated for high reliability, boasting an endurance of over 1 million erase/write cycles and data retention exceeding 200 years. It also features ESD protection greater than 4000V, ensuring durability in various environments. The device is available in multiple package types, including 8-lead PDIP, SOIC, MSOP, TSSOP, and TDFN, and is compliant with RoHS standards. It supports industrial temperature ranges from -40¬8C to +85¬8C and automotive ranges from -40¬8C to +125¬8C, making it versatile for different applications.

Datasheet Summary
Powered by GS/AI

The 25LC080CT-E/MNY is an 8 Kbit Serial Electrically Erasable PROM (EEPROM) from Lingto Electronic Limited, designed for use with a Serial Peripheral Interface (SPI). It operates within a voltage range of 2.5V to 5.5V and supports a maximum clock frequency of 10 MHz. The memory is organized as 1024 x 8 bits and features a 16-byte page size for efficient data writing. This device incorporates low-power CMOS technology, with a maximum write current of 5 mA and a read current of 5 mA at 5.5V. It has a standby current of only 5 ¬µA, making it suitable for power-sensitive applications. The EEPROM supports self-timed erase and write cycles, with a maximum duration of 5 ms, and includes block write protection options. The 25LC080CT-E/MNY is rated for high reliability, boasting an endurance of over 1 million erase/write cycles and data retention exceeding 200 years. It also features ESD protection greater than 4000V, ensuring durability in various environments. The device is available in multiple package types, including 8-lead PDIP, SOIC, MSOP, TSSOP, and TDFN, and is compliant with RoHS standards. It supports industrial temperature ranges from -40¬8C to +85¬8C and automotive ranges from -40¬8C to +125¬8C, making it versatile for different applications.

Suppliers

Company
Product
Description
Supplier Links
Memory - 25LC080CT-E/MNY-ND - DigiKey
Thief River Falls, MN, United States
EEPROM Memory IC 8Kb (1K x 8) SPI 10MHz 8-TDFN (2x3)

EEPROM Memory IC 8Kb (1K x 8) SPI 10MHz 8-TDFN (2x3)

Buy Now Datasheet
Memory - 25LC080CT-E/MNY - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
EEPROM Memory IC 8Kbit SPI 10 MHz 8-TDFN (2x3)

EEPROM Memory IC 8Kbit SPI 10 MHz 8-TDFN (2x3)

Buy Now Datasheet
Eeprom, 8Kbit, -40 To 125Deg C; Memory Size Microchip - 08R2232 - Newark, An Avnet Company
Chicago, IL, United States
Eeprom, 8Kbit, -40 To 125Deg C; Memory Size Microchip
08R2232
Eeprom, 8Kbit, -40 To 125Deg C; Memory Size Microchip 08R2232
EEPROM, 8KBIT, -40 TO 125DEG C; Memory Size:8Kbit; EEPROM Memory Configuration:1K x 8bit; Memory Interface Type:Serial SPI; Clock Frequency:10MHz; Memory Case Style:TDFN; No. of Pins:8Pins; Supply Voltage Min:2.5V RoHS Compliant: Yes

EEPROM, 8KBIT, -40 TO 125DEG C; Memory Size:8Kbit; EEPROM Memory Configuration:1K x 8bit; Memory Interface Type:Serial SPI; Clock Frequency:10MHz; Memory Case Style:TDFN; No. of Pins:8Pins; Supply Voltage Min:2.5V RoHS Compliant: Yes

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - Memory - 25LC080CT-E/MNY - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
25LC080CT-E/MNY
Integrated Circuits (ICs) - Memory - Memory 25LC080CT-E/MNY
IC EEPROM 8KBIT SPI 10MHZ 8TDFN

IC EEPROM 8KBIT SPI 10MHZ 8TDFN

Supplier's Site
IC EEPROM 8KBIT SPI 10MHZ 8TDFN

IC EEPROM 8KBIT SPI 10MHZ 8TDFN

Supplier's Site Datasheet

Technical Specifications

  DigiKey Quarktwin Technology Ltd. Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number 25LC080CT-E/MNY-ND 25LC080CT-E/MNY 08R2232 25LC080CT-E/MNY 25LC080CT-E/MNY
Product Name Memory Memory Eeprom, 8Kbit, -40 To 125Deg C; Memory Size Microchip Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category EEPROM EEPROM; EEPROM EEPROM EEPROM; Non-Volatile EEPROM; EEPROM
Operating Temperature -40 to 125 C (-40 to 257 F) -40 to 125 C (-40 to 257 F)
Package Type 8-WFDFN Exposed Pad 8-WFDFN Exposed Pad TDFN
Supply Voltage 2.5V ~ 5.5V 2.5V ~ 5.5V Surface Mount
Unlock Full Specs
to access all available technical data

Similar Products

Flash Memory - 1882874P - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Package Type VFBGA
Pins 63
View Details
Memory - 24C01 - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category EEPROM; EEPROM
Access Time 900 ns
Density 1 kbits
View Details
Memory - AS29F010 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category FLASH
Access Time 60 to 150 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details