Microchip Technology, Inc. Memory 25LC010AT-E/MNY

Description
EEPROM Memory IC 1Kb (128 x 8) SPI 10MHz 8-TDFN (2x3)
Request a Quote Datasheet
Description
EEPROM Memory IC 1Kb (128 x 8) SPI 10MHz 8-TDFN (2x3)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - 25LC010AT-E/MNY-ND - DigiKey
Thief River Falls, MN, United States
EEPROM Memory IC 1Kb (128 x 8) SPI 10MHz 8-TDFN (2x3)

EEPROM Memory IC 1Kb (128 x 8) SPI 10MHz 8-TDFN (2x3)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - Memory - 25LC010AT-E/MNY - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
25LC010AT-E/MNY
Integrated Circuits (ICs) - Memory - Memory 25LC010AT-E/MNY
IC EEPROM 1KBIT SPI 10MHZ 8TDFN

IC EEPROM 1KBIT SPI 10MHZ 8TDFN

Supplier's Site
Memory - 25LC010AT-E/MNY - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
EEPROM Memory IC 1Kbit SPI 10 MHz 8-TDFN (2x3)

EEPROM Memory IC 1Kbit SPI 10 MHz 8-TDFN (2x3)

Buy Now Datasheet
IC EEPROM 1KBIT SPI 10MHZ 8TDFN

IC EEPROM 1KBIT SPI 10MHZ 8TDFN

Supplier's Site Datasheet

Technical Specifications

  DigiKey Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd. Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number 25LC010AT-E/MNY-ND 25LC010AT-E/MNY 25LC010AT-E/MNY 25LC010AT-E/MNY
Product Name Memory Integrated Circuits (ICs) - Memory - Memory Memory Memory
Memory Category EEPROM EEPROM; Non-Volatile EEPROM; EEPROM EEPROM; EEPROM
Operating Temperature -40 to 125 C (-40 to 257 F) -40 to 125 C (-40 to 257 F)
Package Type 8-WFDFN Exposed Pad 8-WFDFN Exposed Pad
Supply Voltage 2.5V ~ 5.5V Surface Mount 2.5V ~ 5.5V
Unlock Full Specs
to access all available technical data

Similar Products

SN74ACT2228 256 x 1 x 2 dual independent synchronous FIFO memories - SN74ACT2228DW - Texas Instruments
Specs
Memory Category FIFO
Package Type SOIC
View Details
5 suppliers
SDRAM - 1882599 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category DRAM Chip
Access Time 5 ns
Bits per Word 8 bits
View Details
 - 27S35FM/B - Rochester Electronics
Specs
Memory Category PROM
Package Type CFP24
View Details
2 suppliers
Memory - AS8E128K32 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category EEPROM; EEPROM
Access Time 250 to 300 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details