Microchip Technology, Inc. Memory 25LC010A-E/SN16KVAO

Description
IC EEPROM 1KBIT SPI 10MHZ 8SOIC
Description
IC EEPROM 1KBIT SPI 10MHZ 8SOIC
Datasheet
Datasheet Summary
Powered by GS/AI

The 25LC010A-E/SN16KVAO is a 1 Kbit Serial EEPROM from Lingto Electronic Limited, designed for use with a Serial Peripheral Interface (SPI). It operates within a supply voltage range of 2.5V to 5.5V and supports a maximum clock frequency of 10 MHz. The device features a low-power CMOS technology, with a maximum write and read current of 5 mA at 5.5V, and a standby current of only 5 ¬µA. This EEPROM is organized as 128 x 8 bits and supports write page mode for up to 16 bytes, as well as sequential read operations. It includes self-timed erase and write cycles with a maximum duration of 5 ms. The device also offers block write protection, allowing users to protect none, 1/4, 1/2, or the entire memory array. Built-in write protection features include power-on/off data protection circuitry and a dedicated write-protect pin. The 25LC010A is rated for high reliability, with an endurance of 1,000,000 erase/write cycles and a data retention period exceeding 200 years. It is available in various package types, including 8-lead PDIP, SOIC, MSOP, TSSOP, DFN, and SOT-23, making it suitable for a wide range of applications. The device is compliant with RoHS standards and is available in industrial (-40¬8C to +85¬8C) and automotive (-40¬8C to +125¬8C) temperature ranges.

Datasheet Summary
Powered by GS/AI

The 25LC010A-E/SN16KVAO is a 1 Kbit Serial EEPROM from Lingto Electronic Limited, designed for use with a Serial Peripheral Interface (SPI). It operates within a supply voltage range of 2.5V to 5.5V and supports a maximum clock frequency of 10 MHz. The device features a low-power CMOS technology, with a maximum write and read current of 5 mA at 5.5V, and a standby current of only 5 ¬µA. This EEPROM is organized as 128 x 8 bits and supports write page mode for up to 16 bytes, as well as sequential read operations. It includes self-timed erase and write cycles with a maximum duration of 5 ms. The device also offers block write protection, allowing users to protect none, 1/4, 1/2, or the entire memory array. Built-in write protection features include power-on/off data protection circuitry and a dedicated write-protect pin. The 25LC010A is rated for high reliability, with an endurance of 1,000,000 erase/write cycles and a data retention period exceeding 200 years. It is available in various package types, including 8-lead PDIP, SOIC, MSOP, TSSOP, DFN, and SOT-23, making it suitable for a wide range of applications. The device is compliant with RoHS standards and is available in industrial (-40¬8C to +85¬8C) and automotive (-40¬8C to +125¬8C) temperature ranges.

Suppliers

Company
Product
Description
Supplier Links
IC EEPROM 1KBIT SPI 10MHZ 8SOIC

IC EEPROM 1KBIT SPI 10MHZ 8SOIC

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - 25LC010A-E/SN16KVAO - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
25LC010A-E/SN16KVAO
Integrated Circuits (ICs) - Memory 25LC010A-E/SN16KVAO
IC EEPROM 1KBIT SPI 10MHZ 8SOIC

IC EEPROM 1KBIT SPI 10MHZ 8SOIC

Supplier's Site
Memory - 25LC010A-E/SN16KVAO - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
EEPROM Memory IC 1Kbit SPI 10 MHz 8-SOIC

EEPROM Memory IC 1Kbit SPI 10 MHz 8-SOIC

Buy Now Datasheet

Technical Specifications

  Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips
Product Number 25LC010A-E/SN16KVAO 25LC010A-E/SN16KVAO 25LC010A-E/SN16KVAO
Product Name Memory Integrated Circuits (ICs) - Memory Memory
Memory Category EEPROM; EEPROM EEPROM; Non-Volatile EEPROM; EEPROM
Density 1 kbits 1 kbits 1 kbits
Data Rate 10 MHz
Unlock Full Specs
to access all available technical data

Similar Products

SDRAM - 1882578 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category DRAM Chip
Access Time 5 ns
Bits per Word 8 bits
View Details
Memory - 99320-E0474-A - Lingto Electronic Limited
Infineon Technologies AG
View Details
2 suppliers
Memory - AT24CS08-SSHM-T - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category EEPROM; EEPROM
Access Time 550 ns
Density 8 kbits
View Details