Microchip Technology, Inc. Integrated Circuits (ICs) - Memory - Memory 25AA080DT-I/MNY

Description
Win Source Part Number: 1355233-25AA080DT-I/ MNY Category: Integrated Circuits (ICs) - Memory - Memory Temperature Range - Operating: -40°C ~ 85°C (TA) Fake Threat In the Open Market: 36 pct. MSL Level: 1 (Unlimited) Mfr: Microchip Technology Package: Tape & Reel Product Status: Active Package / Case: 8-WFDFN Exposed Pad Supplier Device Package: 8-TDFN (2x3) Base Product Number: 25AA080 Technology: EEPROM Mounting Type: Surface Mount HTSUS: 8542.32.0051 REACH Status: REACH Unaffected ECCN: EAR99 Voltage - Supply: 1.8V ~ 5.5V Memory Type: Non-Volatile Memory Format: EEPROM Memory Size: 8Kbit Memory Organization: 1K x 8 Memory Interface: SPI Clock Frequency: 10 MHz Write Cycle Time - Word, Page: 5ms
Request a Quote Datasheet
Description
Win Source Part Number: 1355233-25AA080DT-I/ MNY Category: Integrated Circuits (ICs) - Memory - Memory Temperature Range - Operating: -40°C ~ 85°C (TA) Fake Threat In the Open Market: 36 pct. MSL Level: 1 (Unlimited) Mfr: Microchip Technology Package: Tape & Reel Product Status: Active Package / Case: 8-WFDFN Exposed Pad Supplier Device Package: 8-TDFN (2x3) Base Product Number: 25AA080 Technology: EEPROM Mounting Type: Surface Mount HTSUS: 8542.32.0051 REACH Status: REACH Unaffected ECCN: EAR99 Voltage - Supply: 1.8V ~ 5.5V Memory Type: Non-Volatile Memory Format: EEPROM Memory Size: 8Kbit Memory Organization: 1K x 8 Memory Interface: SPI Clock Frequency: 10 MHz Write Cycle Time - Word, Page: 5ms
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Integrated Circuits (ICs) - Memory - Memory - 1355233-25AA080DT-I/MNY - Win Source Electronics
Laguna Hills, CA, United States
Integrated Circuits (ICs) - Memory - Memory
1355233-25AA080DT-I/MNY
Integrated Circuits (ICs) - Memory - Memory 1355233-25AA080DT-I/MNY
Win Source Part Number: 1355233-25AA080DT-I/ MNY Category: Integrated Circuits (ICs) - Memory - Memory Temperature Range - Operating: -40°C ~ 85°C (TA) Fake Threat In the Open Market: 36 pct. MSL Level: 1 (Unlimited) Mfr: Microchip Technology Package: Tape & Reel Product Status: Active Package / Case: 8-WFDFN Exposed Pad Supplier Device Package: 8-TDFN (2x3) Base Product Number: 25AA080 Technology: EEPROM Mounting Type: Surface Mount HTSUS: 8542.32.0051 REACH Status: REACH Unaffected ECCN: EAR99 Voltage - Supply: 1.8V ~ 5.5V Memory Type: Non-Volatile Memory Format: EEPROM Memory Size: 8Kbit Memory Organization: 1K x 8 Memory Interface: SPI Clock Frequency: 10 MHz Write Cycle Time - Word, Page: 5ms

Win Source Part Number: 1355233-25AA080DT-I/MNY
Category: Integrated Circuits (ICs) - Memory - Memory
Temperature Range - Operating: -40°C ~ 85°C (TA)
Fake Threat In the Open Market: 36 pct.
MSL Level: 1 (Unlimited)
Mfr: Microchip Technology
Package: Tape & Reel
Product Status: Active
Package / Case: 8-WFDFN Exposed Pad
Supplier Device Package: 8-TDFN (2x3)
Base Product Number: 25AA080
Technology: EEPROM
Mounting Type: Surface Mount
HTSUS: 8542.32.0051
REACH Status: REACH Unaffected
ECCN: EAR99
Voltage - Supply: 1.8V ~ 5.5V
Memory Type: Non-Volatile
Memory Format: EEPROM
Memory Size: 8Kbit
Memory Organization: 1K x 8
Memory Interface: SPI
Clock Frequency: 10 MHz
Write Cycle Time - Word, Page: 5ms

Buy Now Datasheet
Memory - 25AA080DT-I/MNYDKR-ND - DigiKey
Thief River Falls, MN, United States
EEPROM Memory IC 8Kb (1K x 8) SPI 10MHz 8-TDFN (2x3)

EEPROM Memory IC 8Kb (1K x 8) SPI 10MHz 8-TDFN (2x3)

Buy Now Datasheet
Memory - 25AA080DT-I/MNYTR-ND - DigiKey
Thief River Falls, MN, United States
EEPROM Memory IC 8Kb (1K x 8) SPI 10MHz 8-TDFN (2x3)

EEPROM Memory IC 8Kb (1K x 8) SPI 10MHz 8-TDFN (2x3)

Buy Now Datasheet
Memory - 25AA080DT-I/MNYCT-ND - DigiKey
Thief River Falls, MN, United States
EEPROM Memory IC 8Kb (1K x 8) SPI 10MHz 8-TDFN (2x3)

EEPROM Memory IC 8Kb (1K x 8) SPI 10MHz 8-TDFN (2x3)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - Memory - 25AA080DT-I/MNY - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
25AA080DT-I/MNY
Integrated Circuits (ICs) - Memory - Memory 25AA080DT-I/MNY
IC EEPROM 8KBIT SPI 10MHZ 8TDFN

IC EEPROM 8KBIT SPI 10MHZ 8TDFN

Supplier's Site
Eeprom, 8Kbit, -40 To 85Deg C; Memory Size Microchip - 08R2204 - Newark, An Avnet Company
Chicago, IL, United States
Eeprom, 8Kbit, -40 To 85Deg C; Memory Size Microchip
08R2204
Eeprom, 8Kbit, -40 To 85Deg C; Memory Size Microchip 08R2204
EEPROM, 8KBIT, -40 TO 85DEG C; Memory Size:8Kbit; EEPROM Memory Configuration:1K x 8bit; Memory Interface Type:Serial SPI; Clock Frequency:10MHz; Memory Case Style:TDFN; No. of Pins:8Pins; Supply Voltage Min:1.8V RoHS Compliant: Yes

EEPROM, 8KBIT, -40 TO 85DEG C; Memory Size:8Kbit; EEPROM Memory Configuration:1K x 8bit; Memory Interface Type:Serial SPI; Clock Frequency:10MHz; Memory Case Style:TDFN; No. of Pins:8Pins; Supply Voltage Min:1.8V RoHS Compliant: Yes

Supplier's Site Datasheet
IC EEPROM 8KBIT SPI 10MHZ 8TDFN

IC EEPROM 8KBIT SPI 10MHZ 8TDFN

Supplier's Site Datasheet
Memory - 25AA080DT-I/MNY - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
EEPROM Memory IC 8Kbit SPI 10 MHz 8-TDFN (2x3)

EEPROM Memory IC 8Kbit SPI 10 MHz 8-TDFN (2x3)

Buy Now Datasheet

Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company Lingto Electronic Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number 1355233-25AA080DT-I/MNY 25AA080DT-I/MNYDKR-ND 25AA080DT-I/MNY 08R2204 25AA080DT-I/MNY 25AA080DT-I/MNY
Product Name Integrated Circuits (ICs) - Memory - Memory Memory Integrated Circuits (ICs) - Memory - Memory Eeprom, 8Kbit, -40 To 85Deg C; Memory Size Microchip Memory Memory
Memory Category EEPROM; Non-Volatile EEPROM EEPROM; Non-Volatile EEPROM EEPROM; EEPROM EEPROM; EEPROM
Cycle Time 5.00E6 ns 5.00E6 ns
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Supply Voltage 1.8V ~ 5.5V 1.8V ~ 5.5V Surface Mount 1.8V ~ 5.5V
Unlock Full Specs
to access all available technical data

Similar Products

Memory - 27S21DM/B - Quarktwin Technology Ltd.
Rochester Electronics
View Details
2 suppliers
SN74ACT2228 256 x 1 x 2 dual independent synchronous FIFO memories - SN74ACT2228DW - Texas Instruments
Specs
Memory Category FIFO
Package Type SOIC
View Details
5 suppliers
Memory - AS4C1024 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category DRAM; DRAM Chip
Access Time 80 to 120 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details