Microchip Technology, Inc. Memory 25AA080C-E/MNY16KVAO

Description
EEPROM Memory IC 8Kbit SPI 10 MHz 8-TDFN (2x3)
Datasheet
Description
EEPROM Memory IC 8Kbit SPI 10 MHz 8-TDFN (2x3)
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - 25AA080C-E/MNY16KVAO - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
EEPROM Memory IC 8Kbit SPI 10 MHz 8-TDFN (2x3)

EEPROM Memory IC 8Kbit SPI 10 MHz 8-TDFN (2x3)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - 25AA080C-E/MNY16KVAO - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
25AA080C-E/MNY16KVAO
Integrated Circuits (ICs) - Memory 25AA080C-E/MNY16KVAO
IC EEPROM 8KBIT SPI 10MHZ 8TDFN

IC EEPROM 8KBIT SPI 10MHZ 8TDFN

Supplier's Site
IC EEPROM 8KBIT SPI 10MHZ 8TDFN

IC EEPROM 8KBIT SPI 10MHZ 8TDFN

Supplier's Site Datasheet

Technical Specifications

  Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number 25AA080C-E/MNY16KVAO 25AA080C-E/MNY16KVAO 25AA080C-E/MNY16KVAO
Product Name Memory Integrated Circuits (ICs) - Memory Memory
Memory Category EEPROM; EEPROM EEPROM; Non-Volatile EEPROM; EEPROM
Operating Temperature -40 to 125 C (-40 to 257 F) -40 to 125 C (-40 to 257 F)
Density 8 kbits 8 kbits 8 kbits
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