Microchip Technology, Inc. Memory 24FC08T-E/Q6B36KVAO

Description
EEPROM Memory IC 8Kb (1K x 8) I²C 1MHz 450ns 8-UDFN (2x3)
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Description
EEPROM Memory IC 8Kb (1K x 8) I²C 1MHz 450ns 8-UDFN (2x3)
Request a Quote
Datasheet
Datasheet Summary
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The 24FC08T-E/Q6B36KVAO is an 8Kbit I¬=C serial EEPROM from Lingto Electronic Limited, designed for low-power applications. It operates with a supply voltage range of 1.7V to 5.5V and supports a maximum clock frequency of 1 MHz. The device features a low read current of 1 mA and a standby current of 1 OºA, making it suitable for battery-operated devices. It includes a 16-byte page write buffer and has a maximum page write time of 5 ms. The EEPROM is rated for more than 1 million erase/write cycles and offers data retention of over 200 years. It is available in multiple package types, including 8-lead SOIC and DFN, and is compliant with RoHS standards. The device is also AEC-Q100 qualified, indicating its suitability for automotive applications.

Datasheet Summary
Powered by GS/AI

The 24FC08T-E/Q6B36KVAO is an 8Kbit I¬=C serial EEPROM from Lingto Electronic Limited, designed for low-power applications. It operates with a supply voltage range of 1.7V to 5.5V and supports a maximum clock frequency of 1 MHz. The device features a low read current of 1 mA and a standby current of 1 OºA, making it suitable for battery-operated devices. It includes a 16-byte page write buffer and has a maximum page write time of 5 ms. The EEPROM is rated for more than 1 million erase/write cycles and offers data retention of over 200 years. It is available in multiple package types, including 8-lead SOIC and DFN, and is compliant with RoHS standards. The device is also AEC-Q100 qualified, indicating its suitability for automotive applications.

Suppliers

Company
Product
Description
Supplier Links
Memory - 150-24FC08T-E/Q6B36KVAOTR-ND - DigiKey
Thief River Falls, MN, United States
EEPROM Memory IC 8Kb (1K x 8) I²C 1MHz 450ns 8-UDFN (2x3)

EEPROM Memory IC 8Kb (1K x 8) I²C 1MHz 450ns 8-UDFN (2x3)

Buy Now Datasheet
Memory - 150-24FC08T-E/Q6B36KVAODKR-ND - DigiKey
Thief River Falls, MN, United States
IC EEPROM 8KBIT I2C 1MHZ 8UDFN

IC EEPROM 8KBIT I2C 1MHZ 8UDFN

Buy Now Datasheet
Memory - 150-24FC08T-E/Q6B36KVAOCT-ND - DigiKey
Thief River Falls, MN, United States
IC EEPROM 8KBIT I2C 1MHZ 8UDFN

IC EEPROM 8KBIT I2C 1MHZ 8UDFN

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - 24FC08T-E/Q6B36KVAO - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
24FC08T-E/Q6B36KVAO
Integrated Circuits (ICs) - Memory 24FC08T-E/Q6B36KVAO
8KB I2C EEPROM, 1MHZ 1.7-5.5V, 8

8KB I2C EEPROM, 1MHZ 1.7-5.5V, 8

Supplier's Site
8KB I2C EEPROM, 1MHZ 1.7-5.5V, 8

8KB I2C EEPROM, 1MHZ 1.7-5.5V, 8

Supplier's Site Datasheet
Memory - 24FC08T-E/Q6B36KVAO - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
EEPROM Memory IC 8Kbit I²C 1 MHz 450 ns 8-UDFN (2x3)

EEPROM Memory IC 8Kbit I²C 1 MHz 450 ns 8-UDFN (2x3)

Buy Now Datasheet

Technical Specifications

  DigiKey Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number 150-24FC08T-E/Q6B36KVAOTR-ND 24FC08T-E/Q6B36KVAO 24FC08T-E/Q6B36KVAO 24FC08T-E/Q6B36KVAO
Product Name Memory Integrated Circuits (ICs) - Memory Memory Memory
Memory Category EEPROM EEPROM; Non-Volatile EEPROM; EEPROM EEPROM; EEPROM
Operating Temperature -40 to 125 C (-40 to 257 F) -40 to 125 C (-40 to 257 F) -40 to 125 C (-40 to 257 F)
Package Type 8-UFDFN Exposed Pad 8-UFDFN Exposed Pad
Supply Voltage 1.7V ~ 5.5V 1.7V ~ 5.5V 1.7V ~ 5.5V
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