Microchip Technology, Inc. Memory 24FC04T-E/Q6B36KVAO

Description
EEPROM Memory IC 4Kb (256 x 8 x 2) I²C 1MHz 450ns 8-UDFN (2x3)
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Description
EEPROM Memory IC 4Kb (256 x 8 x 2) I²C 1MHz 450ns 8-UDFN (2x3)
Request a Quote
Datasheet
Datasheet Summary
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The 24FC04T-E/Q6B36KVAO is a 4Kbit I¬=C serial EEPROM from Quarktwin Technology Ltd. It operates on a single supply voltage range of 1.7V to 5.5V and supports a maximum clock frequency of 1 MHz. The device features low power consumption with a maximum read current of 1 mA and a standby current of 1 OºA. It includes a 16-byte page write buffer and has a maximum page write time of 5 ms. The EEPROM is designed for high endurance, offering more than 1 million erase/write cycles and data retention exceeding 200 years. It is available in various package types, including 8-lead DFN and UDFN, and is compliant with RoHS standards. The device is suitable for industrial applications with operating temperature ranges from -40¬8C to +125¬8C and is AEC-Q100 qualified for automotive use.

Datasheet Summary
Powered by GS/AI

The 24FC04T-E/Q6B36KVAO is a 4Kbit I¬=C serial EEPROM from Quarktwin Technology Ltd. It operates on a single supply voltage range of 1.7V to 5.5V and supports a maximum clock frequency of 1 MHz. The device features low power consumption with a maximum read current of 1 mA and a standby current of 1 OºA. It includes a 16-byte page write buffer and has a maximum page write time of 5 ms. The EEPROM is designed for high endurance, offering more than 1 million erase/write cycles and data retention exceeding 200 years. It is available in various package types, including 8-lead DFN and UDFN, and is compliant with RoHS standards. The device is suitable for industrial applications with operating temperature ranges from -40¬8C to +125¬8C and is AEC-Q100 qualified for automotive use.

Suppliers

Company
Product
Description
Supplier Links
Memory - 150-24FC04T-E/Q6B36KVAOTR-ND - DigiKey
Thief River Falls, MN, United States
EEPROM Memory IC 4Kb (256 x 8 x 2) I²C 1MHz 450ns 8-UDFN (2x3)

EEPROM Memory IC 4Kb (256 x 8 x 2) I²C 1MHz 450ns 8-UDFN (2x3)

Buy Now Datasheet
Memory - 150-24FC04T-E/Q6B36KVAOCT-ND - DigiKey
Thief River Falls, MN, United States
IC EEPROM 4KBIT I2C 1MHZ 8UDFN

IC EEPROM 4KBIT I2C 1MHZ 8UDFN

Buy Now Datasheet
Memory - 150-24FC04T-E/Q6B36KVAODKR-ND - DigiKey
Thief River Falls, MN, United States
IC EEPROM 4KBIT I2C 1MHZ 8UDFN

IC EEPROM 4KBIT I2C 1MHZ 8UDFN

Buy Now Datasheet
Memory - 24FC04T-E/Q6B36KVAO - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
EEPROM Memory IC 4Kbit I²C 1 MHz 450 ns 8-UDFN (2x3)

EEPROM Memory IC 4Kbit I²C 1 MHz 450 ns 8-UDFN (2x3)

Buy Now Datasheet
4KB I2C EEPROM, 1MHZ 1.7-5.5V, 8

4KB I2C EEPROM, 1MHZ 1.7-5.5V, 8

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - 24FC04T-E/Q6B36KVAO - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
24FC04T-E/Q6B36KVAO
Integrated Circuits (ICs) - Memory 24FC04T-E/Q6B36KVAO
4KB I2C EEPROM, 1MHZ 1.7-5.5V, 8

4KB I2C EEPROM, 1MHZ 1.7-5.5V, 8

Supplier's Site

Technical Specifications

  DigiKey Quarktwin Technology Ltd. Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number 150-24FC04T-E/Q6B36KVAOTR-ND 24FC04T-E/Q6B36KVAO 24FC04T-E/Q6B36KVAO 24FC04T-E/Q6B36KVAO
Product Name Memory Memory Memory Integrated Circuits (ICs) - Memory
Memory Category EEPROM EEPROM; EEPROM EEPROM; EEPROM EEPROM; Non-Volatile
Operating Temperature -40 to 125 C (-40 to 257 F) -40 to 125 C (-40 to 257 F) -40 to 125 C (-40 to 257 F)
Package Type 8-UFDFN Exposed Pad 8-UFDFN Exposed Pad
Supply Voltage 1.7V ~ 5.5V 1.7V ~ 5.5V 1.7V ~ 5.5V
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