Microchip Technology, Inc. Memory 24FC04HT-E/MUY

Description
EEPROM Memory IC 4Kb (256 x 8 x 2) I²C 1MHz 450ns 8-UDFN (2x3)
Request a Quote
Description
EEPROM Memory IC 4Kb (256 x 8 x 2) I²C 1MHz 450ns 8-UDFN (2x3)
Request a Quote
Datasheet
Datasheet Summary
Powered by GS/AI

The 24FC04HT-E/MUY is a 4Kbit I¬=C serial EEPROM from Quarktwin Technology Ltd. It operates on a single supply voltage ranging from 1.7V to 5.5V and supports clock frequencies of up to 1 MHz. The device features low power consumption with a maximum read current of 1 mA and a standby current of 1 ¬µA. It includes a 16-byte page write buffer and a maximum page write time of 5 ms. The EEPROM is designed with hardware write protection for half of its memory array and offers more than 1 million erase/write cycles with data retention exceeding 200 years. It is available in various package types, including 8-lead MSOP, PDIP, SOIC, TDFN, TSSOP, and 5-lead SOT-23. The product is compliant with RoHS standards and is qualified for automotive applications under AEC-Q100.

Datasheet Summary
Powered by GS/AI

The 24FC04HT-E/MUY is a 4Kbit I¬=C serial EEPROM from Quarktwin Technology Ltd. It operates on a single supply voltage ranging from 1.7V to 5.5V and supports clock frequencies of up to 1 MHz. The device features low power consumption with a maximum read current of 1 mA and a standby current of 1 ¬µA. It includes a 16-byte page write buffer and a maximum page write time of 5 ms. The EEPROM is designed with hardware write protection for half of its memory array and offers more than 1 million erase/write cycles with data retention exceeding 200 years. It is available in various package types, including 8-lead MSOP, PDIP, SOIC, TDFN, TSSOP, and 5-lead SOT-23. The product is compliant with RoHS standards and is qualified for automotive applications under AEC-Q100.

Suppliers

Company
Product
Description
Supplier Links
Memory - 24FC04HT-E/MUYCT-ND - DigiKey
Thief River Falls, MN, United States
EEPROM Memory IC 4Kb (256 x 8 x 2) I²C 1MHz 450ns 8-UDFN (2x3)

EEPROM Memory IC 4Kb (256 x 8 x 2) I²C 1MHz 450ns 8-UDFN (2x3)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - Memory - 24FC04HT-E/MUY - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
24FC04HT-E/MUY
Integrated Circuits (ICs) - Memory - Memory 24FC04HT-E/MUY
IC EEPROM 4KBIT I2C 1MHZ 8UDFN

IC EEPROM 4KBIT I2C 1MHZ 8UDFN

Supplier's Site
IC EEPROM 4KBIT I2C 1MHZ 8UDFN

IC EEPROM 4KBIT I2C 1MHZ 8UDFN

Supplier's Site Datasheet
Eeprom, Aec-Q100, 4Kbit, -40 To 125Deg C; Memory Size Microchip - 93AC6709 - Newark, An Avnet Company
Chicago, IL, United States
Eeprom, Aec-Q100, 4Kbit, -40 To 125Deg C; Memory Size Microchip
93AC6709
Eeprom, Aec-Q100, 4Kbit, -40 To 125Deg C; Memory Size Microchip 93AC6709
EEPROM, AEC-Q100, 4KBIT, -40 TO 125DEG C; Memory Size:4Kbit; EEPROM Memory Configuration:2 BLK (256 x 8bit); Memory Interface Type:Serial I2C (2-Wire); Clock Frequency:1MHz; Memory Case Style:UDFN-EP; No. of Pins:8Pins RoHS Compliant: Yes

EEPROM, AEC-Q100, 4KBIT, -40 TO 125DEG C; Memory Size:4Kbit; EEPROM Memory Configuration:2 BLK (256 x 8bit); Memory Interface Type:Serial I2C (2-Wire); Clock Frequency:1MHz; Memory Case Style:UDFN-EP; No. of Pins:8Pins RoHS Compliant: Yes

Supplier's Site Datasheet
Memory - 24FC04HT-E/MUY - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
EEPROM Memory IC 4Kbit I²C 1 MHz 450 ns 8-UDFN (2x3)

EEPROM Memory IC 4Kbit I²C 1 MHz 450 ns 8-UDFN (2x3)

Buy Now Datasheet

Technical Specifications

  DigiKey Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited Newark, An Avnet Company Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number 24FC04HT-E/MUYCT-ND 24FC04HT-E/MUY 24FC04HT-E/MUY 93AC6709 24FC04HT-E/MUY
Product Name Memory Integrated Circuits (ICs) - Memory - Memory Memory Eeprom, Aec-Q100, 4Kbit, -40 To 125Deg C; Memory Size Microchip Memory
Memory Category EEPROM EEPROM; Non-Volatile EEPROM; EEPROM EEPROM EEPROM; EEPROM
Operating Temperature -40 to 125 C (-40 to 257 F) -40 to 125 C (-40 to 257 F)
Package Type 8-UFDFN Exposed Pad UDFN-EP 8-UFDFN Exposed Pad
Supply Voltage 1.7V ~ 5.5V 5ms 1.7V ~ 5.5V
Unlock Full Specs
to access all available technical data

Similar Products

Memory - AS8FLC1M32A - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category FLASH
Access Time 70 to 120 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Memory - 71256S70TDB - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category SRAM; SRAM Chip
Access Time 70 ns
Density 256 kbits
View Details
SDRAM - 1882660 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category DRAM Chip
Access Time 5 ns
Bits per Word 8 bits
View Details
 - 9403ASDMQB - Rochester Electronics
Specs
Memory Category FIFO
Package Type DIP; DIP24
View Details
3 suppliers