Microchip Technology, Inc. Memory 24CS512-E/SN66KVAO

Description
EEPROM Memory IC 512Kb (64K x 8) I²C 3.4MHz 400ns 8-SOIC
Request a Quote
Description
EEPROM Memory IC 512Kb (64K x 8) I²C 3.4MHz 400ns 8-SOIC
Request a Quote
Datasheet
Datasheet Summary
Powered by GS/AI

The 24CS512-E/SN66KVAO is a 512-Kbit I¬=C Serial EEPROM from Quarktwin Technology Ltd., organized as 65,536 x 8-bit blocks. It supports high-speed I¬=C communication at 3.4 MHz and is compatible with standard I¬=C speeds of 1 MHz, 400 kHz, and 100 kHz. The device allows for byte or page writes up to 128 bytes and features a self-timed write cycle with a maximum duration of 5 ms. This EEPROM includes a 128-bit preprogrammed serial number for unique identification, along with a user-programmable, lockable 128-byte ID page. It offers versatile data protection options, including a hardware write-protect pin and enhanced software write protection. The operating voltage range is from 1.7V to 5.5V, with low power consumption characteristics: a maximum write current of 3.0 mA, read current of 1.0 mA, and standby current of just 1 ¬µA. The 24CS512 is designed for high reliability, supporting over one million erase/write cycles and featuring built-in Error Correction Code (ECC) logic for improved data integrity. It is RoHS compliant and available in various package types, including 8-Lead MSOP, PDIP, SOIC, TSSOP, and more, making it suitable for a wide range of consumer and industrial applications.

Datasheet Summary
Powered by GS/AI

The 24CS512-E/SN66KVAO is a 512-Kbit I¬=C Serial EEPROM from Quarktwin Technology Ltd., organized as 65,536 x 8-bit blocks. It supports high-speed I¬=C communication at 3.4 MHz and is compatible with standard I¬=C speeds of 1 MHz, 400 kHz, and 100 kHz. The device allows for byte or page writes up to 128 bytes and features a self-timed write cycle with a maximum duration of 5 ms. This EEPROM includes a 128-bit preprogrammed serial number for unique identification, along with a user-programmable, lockable 128-byte ID page. It offers versatile data protection options, including a hardware write-protect pin and enhanced software write protection. The operating voltage range is from 1.7V to 5.5V, with low power consumption characteristics: a maximum write current of 3.0 mA, read current of 1.0 mA, and standby current of just 1 ¬µA. The 24CS512 is designed for high reliability, supporting over one million erase/write cycles and featuring built-in Error Correction Code (ECC) logic for improved data integrity. It is RoHS compliant and available in various package types, including 8-Lead MSOP, PDIP, SOIC, TSSOP, and more, making it suitable for a wide range of consumer and industrial applications.

Suppliers

Company
Product
Description
Supplier Links
Memory - 150-24CS512-E/SN66KVAO-ND - DigiKey
Thief River Falls, MN, United States
EEPROM Memory IC 512Kb (64K x 8) I²C 3.4MHz 400ns 8-SOIC

EEPROM Memory IC 512Kb (64K x 8) I²C 3.4MHz 400ns 8-SOIC

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - 24CS512-E/SN66KVAO - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
24CS512-E/SN66KVAO
Integrated Circuits (ICs) - Memory 24CS512-E/SN66KVAO
512K I2C SERIAL EEPROM, EXT, 8-S

512K I2C SERIAL EEPROM, EXT, 8-S

Supplier's Site
512K I2C SERIAL EEPROM, EXT, 8-S

512K I2C SERIAL EEPROM, EXT, 8-S

Supplier's Site Datasheet
Memory - 24CS512-E/SN66KVAO - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
EEPROM Memory IC 512Kbit I²C 3.4 MHz 400 ns 8-SOIC

EEPROM Memory IC 512Kbit I²C 3.4 MHz 400 ns 8-SOIC

Buy Now Datasheet

Technical Specifications

  DigiKey Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number 150-24CS512-E/SN66KVAO-ND 24CS512-E/SN66KVAO 24CS512-E/SN66KVAO 24CS512-E/SN66KVAO
Product Name Memory Integrated Circuits (ICs) - Memory Memory Memory
Memory Category EEPROM EEPROM; Non-Volatile EEPROM; EEPROM EEPROM; EEPROM
Operating Temperature -40 to 125 C (-40 to 257 F) -40 to 125 C (-40 to 257 F) -40 to 125 C (-40 to 257 F)
Package Type SOIC; "8-SOIC (0.154"", 3.90mm Width)" SOIC SOIC; 8-SOIC (0.154\", 3.90mm Width)
Supply Voltage 1.7V ~ 5.5V 1.7V ~ 5.5V 1.7V ~ 5.5V
Unlock Full Specs
to access all available technical data

Similar Products

Memory - AS5C1001 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category SRAM; SRAM Chip
Access Time 20 to 70 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Memory - 3015357 - Lingto Electronic Limited
Infineon Technologies AG
View Details
2 suppliers
Controllers - BQ2201SN-NTR - ODG (Origin Data Global)
Specs
Memory Category SRAM Chip
Operating Temperature -40 to 85 C (-40 to 185 F)
Package Type SOIC; 8-SOIC (0.154", 3.90mm Width)
View Details
5 suppliers