Microchip Technology, Inc. Memory 24C01AI/SN

Description
EEPROM, 128X8, Serial, CMOS, PDSO8
  • 24C01AI/SN - Rochester Electronics
    Rochester Electronics
  • Memory - 24C01AI/SN - Quarktwin Technology Ltd.
    Quarktwin Technology Ltd.
Request a Quote Datasheet
Description
EEPROM, 128X8, Serial, CMOS, PDSO8
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
- 24C01AI/SN - Rochester Electronics
Rochester Electronics
Newburyport, MA, United States
24C01AI/SN
24C01AI/SN
EEPROM, 128X8, Serial, CMOS, PDSO8

EEPROM, 128X8, Serial, CMOS, PDSO8

Supplier's Site Datasheet
Memory - 24C01AI/SN - Quarktwin Technology Ltd.
Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
Memory
24C01AI/SN
Memory 24C01AI/SN
EEPROM Memory IC 1Kbit I²C 400 kHz 900 ns 8-SOIC

EEPROM Memory IC 1Kbit I²C 400 kHz 900 ns 8-SOIC

Buy Now Datasheet

Technical Specifications

  Rochester Electronics Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips
Product Number 24C01AI/SN 24C01AI/SN
Product Name Memory
Memory Category EEPROM EEPROM; EEPROM
Logic Family CMOS
Package Type SOP; SOP8 SOIC; 8-SOIC (0.154\", 3.90mm Width)
Access Time 900 ns
Unlock Full Specs
to access all available technical data

Similar Products

Flash Memory - 1882811 - RS Components, Ltd.
RS Components, Ltd.
Flash Memory
1882811
Specs
Memory Category Flash
Bits per Word 8 bits
Pins 8
View Details
Memory IC and Storage Component - 736-DP8430V-33 - ERSAELECTRONICS PTE. LTD.
Texas Instruments
Memory IC and Storage Component
DP8430V-33
Specs
Memory Category DRAM Chip
Operating Temperature 0 C (32 F)
Address Bus Width 20 bits
View Details
3 suppliers
Memory - AT24C256C-MAHL-T - Lingto Electronic Limited
Rochester Electronics
Memory
AT24C256C-MAHL-T
Specs
Memory Category EEPROM; EEPROM
Access Time 550 ns
Density 256 kbits
View Details
4GB Memory IC and Storage Component - 505-647648\HYS72T512022ER-3.7-B - ERSAELECTRONICS PTE. LTD.
Infineon Technologies AG
4GB Memory IC and Storage Component
647648\HYS72T512022ER-3.7-B
View Details