Microchip Technology, Inc. Memory 11AA160T-I/MNY

Description
EEPROM Memory IC 16Kb (2K x 8) Single Wire 100kHz 8-TDFN (2x3)
Request a Quote Datasheet
Description
EEPROM Memory IC 16Kb (2K x 8) Single Wire 100kHz 8-TDFN (2x3)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - 11AA160T-I/MNY-ND - DigiKey
Thief River Falls, MN, United States
EEPROM Memory IC 16Kb (2K x 8) Single Wire 100kHz 8-TDFN (2x3)

EEPROM Memory IC 16Kb (2K x 8) Single Wire 100kHz 8-TDFN (2x3)

Buy Now Datasheet
Memory - 11AA160T-I/MNY - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
EEPROM Memory IC 16Kbit Single Wire 100 kHz 8-TDFN (2x3)

EEPROM Memory IC 16Kbit Single Wire 100 kHz 8-TDFN (2x3)

Buy Now Datasheet
IC EEPROM 16KBIT SGL WIRE 8TDFN

IC EEPROM 16KBIT SGL WIRE 8TDFN

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - Memory - 11AA160T-I/MNY - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
11AA160T-I/MNY
Integrated Circuits (ICs) - Memory - Memory 11AA160T-I/MNY
IC EEPROM 16KBIT SGL WIRE 8TDFN

IC EEPROM 16KBIT SGL WIRE 8TDFN

Supplier's Site

Technical Specifications

  DigiKey Quarktwin Technology Ltd. Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number 11AA160T-I/MNY-ND 11AA160T-I/MNY 11AA160T-I/MNY 11AA160T-I/MNY
Product Name Memory Memory Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category EEPROM EEPROM; EEPROM EEPROM; EEPROM EEPROM; Non-Volatile
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Package Type 8-WFDFN Exposed Pad 8-WFDFN Exposed Pad
Supply Voltage 1.8V ~ 5.5V 1.8V ~ 5.5V -40degC ~ 85degC (TA)
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