Micro Commercial Components Corp. Single Bipolar Transistors SS8550-C-BP

Description
Bipolar (BJT) Transistor PNP 25V 1.5A 190MHz 1W Through Hole TO-92
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Description
Bipolar (BJT) Transistor PNP 25V 1.5A 190MHz 1W Through Hole TO-92
Request a Quote
Datasheet
Datasheet Summary
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The SS8550-C is a PNP silicon bipolar transistor in a TO-92 plastic-encapsulated package, rated for 1.5 A collector current and 40 V collector-base voltage. It dissipates up to 1.0 W at 25°C ambient temperature and operates across a junction temperature range of -55°C to +150°C. The device has a DC current gain (hFE) of 85 to 400 at 100 mA collector current, with collector-emitter saturation voltage ≤0.8 V and base-emitter saturation voltage ≤1.2 V at 800 mA collector current. The transition frequency is 190 MHz. The case meets UL 94 V-0 flammability rating and is RoHS compliant. The -BP suffix indicates bulk packaging.

Datasheet Summary
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The SS8550-C is a PNP silicon bipolar transistor in a TO-92 plastic-encapsulated package, rated for 1.5 A collector current and 40 V collector-base voltage. It dissipates up to 1.0 W at 25°C ambient temperature and operates across a junction temperature range of -55°C to +150°C. The device has a DC current gain (hFE) of 85 to 400 at 100 mA collector current, with collector-emitter saturation voltage ≤0.8 V and base-emitter saturation voltage ≤1.2 V at 800 mA collector current. The transition frequency is 190 MHz. The case meets UL 94 V-0 flammability rating and is RoHS compliant. The -BP suffix indicates bulk packaging.

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Single Bipolar Transistors - 353-SS8550-C-BP-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
353-SS8550-C-BP-ND
Single Bipolar Transistors 353-SS8550-C-BP-ND
Bipolar (BJT) Transistor PNP 25V 1.5A 190MHz 1W Through Hole TO-92

Bipolar (BJT) Transistor PNP 25V 1.5A 190MHz 1W Through Hole TO-92

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Technical Specifications

  DigiKey
Product Category Transistors
Product Number 353-SS8550-C-BP-ND
Product Name Single Bipolar Transistors
Polarity PNP
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