The SIL04P06Y-TP is a P-channel MOSFET using Split Gate Trench technology in a SOT23-6L package, designed for low-side switching applications. It has a drain-source voltage rating of -60 V, a continuous drain current of -3.5 A at 25°C, and a total power dissipation of 1.56 W. The device features a junction temperature range of -55°C to +150°C, a thermal resistance of 80°C/W junction-to-ambient, and complies with RoHS standards. The epoxy meets UL 94 V-0 flammability rating and is halogen-free. The part is marked with the code 04P06Y and is supplied in tape and reel packaging, 3,000 pieces per reel.
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The SIL04P06Y-TP is a P-channel MOSFET using Split Gate Trench technology in a SOT23-6L package, designed for low-side switching applications. It has a drain-source voltage rating of -60 V, a continuous drain current of -3.5 A at 25°C, and a total power dissipation of 1.56 W. The device features a junction temperature range of -55°C to +150°C, a thermal resistance of 80°C/W junction-to-ambient, and complies with RoHS standards. The epoxy meets UL 94 V-0 flammability rating and is halogen-free. The part is marked with the code 04P06Y and is supplied in tape and reel packaging, 3,000 pieces per reel.
