Micro Commercial Components Corp. Single FETs, MOSFETs SICW400N170A-BP

The SICW400N170A is a silicon carbide N-channel MOSFET designed for high-voltage applications such as solar inverters, switch-mode power supplies, and motor drives. It is packaged in a TO-247AB case with dimensions of 20.70 to 21.30 mm in length, 16.25 to 16.85 mm in width, and 19.62 to 20.22 mm in height. The device has a drain-source breakdown voltage of 1700 V, a continuous drain current of 6 A at 25°C, and a drain-source on-resistance of 400 to 500 mΩ at V_GS=20V and I_D=3A. It supports a maximum junction temperature of 175°C, has a thermal resistance of 1.2°C/W junction to case, and meets UL 94 V-0 flammability requirements. The part is RoHS compliant and halogen-free. The SICW400N170A-BP variant includes tube packaging with 30 pieces per tube.