Micro Commercial Components Corp. Single FETs, MOSFETs SICW240N120H-BP

The SICW240N120H is a silicon carbide N-channel MOSFET designed for high-speed switching in applications such as solar inverters, uninterruptible power supplies, and motor drives. It is packaged in a TO-247AB case with a drain-source voltage rating of 1200 V and a continuous drain current of 13.5 A at 25°C. The device features a drain-source on-resistance of 320 mΩ at 25°C and 400 mΩ at 175°C, a gate-source voltage range of -5 V to +20 V, and a thermal resistance junction-to-case of 1.42°C/W. It supports an operating junction temperature from -55°C to +175°C, is halogen-free and RoHS compliant, and exhibits low switching losses. Avalanche energy is rated at 100 mJ for a single pulse.