Micro Commercial Components Corp. Single FETs, MOSFETs SICW060N065H4-BP

SICW060N065H4 is a silicon carbide N-channel MOSFET designed for high-efficiency switching in solar inverters, uninterruptible power supplies, photovoltaic systems, battery chargers, and motor drives. It is housed in a TO-247-4 package with dimensions of 23.30-23.60 mm in length and 16.25-16.85 mm in body width. The device rated for a drain-source voltage of 650 V, gate-source operating voltage of -5 V to +18 V, and continuous drain current of 41 A at Tc=110°C. Thermal resistance junction-to-case is 0.6°C/W, and maximum junction temperature is +175°C. It features essentially zero switching losses, a typical on-resistance of 75 mΩ at 175°C, and a single-pulse avalanche energy of 1.6 J. The part is RoHS compliant, halogen-free, and meets AEC-Q200 qualifications.