Micro Commercial Components Corp. Single FETs, MOSFETs SICW030N120H-BP

SICW030N120H is a silicon carbide N-channel MOSFET in a TO-247AB package, designed for high-speed switching in applications such as solar inverters, uninterruptible power supplies, and motor drives. It has a drain-source voltage rating of 1200 V and a continuous drain current of 78 A at 25°C case temperature. The device features a typical junction-to-case thermal resistance of 0.4°C/W and an operating junction temperature range of -55°C to +175°C. It is halogen-free and RoHS compliant, with a gate-source voltage range of -5 V to +20 V for normal operation. The on-resistance is 40 mΩ at 25°C and 54 mΩ at 175°C when driven at 20 V gate-source voltage. Switching energy losses are low, with turn-on and turn-off energies of 167 µJ and 254 µJ respectively under specified conditions.