Micro Commercial Components Corp. Single FETs, MOSFETs SI3139KL3B-TP

The SI3139KL3B is a P-channel MOSFET in a DFN1006-3 package, measuring 1.05 mm × 0.65 mm, designed for low-power switching applications. It has a drain-source voltage rating of -20 V, a continuous drain current of -0.65 A at 25°C, and a maximum power dissipation of 328 mW. The device features a gate-source voltage rating of ±12 V, a low on-resistance of up to 2000 mΩ at -1.8 V gate drive, and an operating junction temperature range of -55°C to +150°C. It is RoHS compliant, halogen-free, meets UL 94 V-0 flammability rating, and has ESD protection up to 2 kV HBM. The thermal resistance from junction to ambient is 381°C/W when mounted on a 1 in² FR-4 board with 2 oz copper in still air.