P-channel MOSFET in a DFN1006-3 package, rated for a drain-source voltage of -20 V and a continuous drain current of -0.98 A at 25°C, with a thermal resistance of 170°C/W and an operating junction temperature range of -55°C to +150°C. The device is RoHS compliant, halogen-free, and meets UL 94 V-0 flammability rating. It features ESD protection up to 2 kV (HBM) and has a typical on-resistance of 500 mΩ at -2.5 V gate-source voltage. The gate threshold voltage ranges from -0.45 V to -1.0 V, and the total gate charge is 1.7 nC.
P-CHANNEL MOSFET,DFN1006-3
| DigiKey | |
|---|---|
| Product Category | Transistors |
| Product Number | 353-SI2012KL3-TPTR-ND |
| Product Name | Single FETs, MOSFETs |
| Polarity | P-Channel |