Micro Commercial Components Corp. FET, MOSFET Arrays SI1K0N03LKDWS-TP

Dual N-channel MOSFET in SOT-363S package, rated for 30 V drain-source voltage and 0.39 A continuous drain current at 25°C, with a total power dissipation of 0.26 W and junction temperature range from -55°C to +150°C. Features trench LV MOSFET technology, ESD HBM Class 2 protection, and is RoHS compliant with halogen-free, UL 94 V-0 epoxy. Thermal resistance is 480°C/W. Package dimensions are 2.00 mm to 2.20 mm for body length, 1.15 mm to 1.35 mm for width, and 0.80 mm to 1.00 mm for height. The part supports pulsed drain current up to 1.56 A and has a typical on-resistance of 354 mΩ at 10 V gate drive.