Micro Commercial Components Corp. Single Bipolar Transistors S9012-I-AP

PNP silicon transistor in TO-92 package for general-purpose switching and amplification, rated for 500 mA collector current, 40 V collector-base voltage, and 25 V collector-emitter voltage. Power dissipation is 0.625 W at 25°C ambient temperature. Operating and storage junction temperature range is -55°C to +150°C. DC current gain (hFE) ranges from 190 to 300 for the I grade. Collector-emitter saturation voltage is 0.6 V maximum at 500 mA collector current and 50 mA base current. Transition frequency is 150 MHz. The device is RoHS compliant and marked as S9012. Lead style is straight with ammo pack packaging.