Micro Commercial Components Corp. Single Bipolar Transistors PZT5551-TP

NPN silicon transistor for general-purpose switching and amplification in SOT-223 package, measuring 6.70 to 7.30 mm in length and 3.30 to 3.70 mm in width. Rated for a collector-emitter voltage of 160 V, collector current of 0.6 A, and power dissipation of 1 W. Operating and storage junction temperature range is -55°C to +150°C. Thermal resistance is 125°C/W. Features a transition frequency of 100 to 300 MHz, DC current gain (hFE) of 80 to 250 at 10 mA collector current, and collector-emitter saturation voltage of 0.15 V at 10 mA collector current and 1 mA base current. RoHS compliant and halogen-free with UL 94 V-0 flammability rating.