Micro Commercial Components Corp. Single FETs, MOSFETs MSJP11N80A-BP

Description
N-CHANNEL MOSFET, TO-220AB(H)
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Description
N-CHANNEL MOSFET, TO-220AB(H)
Request a Quote
Datasheet
Datasheet Summary
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The MSJP11N80A is an N-channel Super-Junction MOSFET in a TO-220 package, designed for high-voltage switching applications with a drain-source voltage rating of 800 V and a continuous drain current of 11 A at 25°C. It features a low on-resistance of up to 470 mΩ at Vgs=10 V, a gate charge of 24 nC, and thermal resistance of 62.5°C/W junction to ambient. The device is ESD protected up to 2 kV (HBM), has a junction temperature range of -55°C to +150°C, and meets UL 94 V-0 flammability ratings. It is halogen-free, RoHS compliant, and suitable for applications requiring low driving requirements and high efficiency. The MSJP11N80A-BP variant is supplied in bulk packaging with 50 pieces per tube.

Datasheet Summary
Powered by GS/AI

The MSJP11N80A is an N-channel Super-Junction MOSFET in a TO-220 package, designed for high-voltage switching applications with a drain-source voltage rating of 800 V and a continuous drain current of 11 A at 25°C. It features a low on-resistance of up to 470 mΩ at Vgs=10 V, a gate charge of 24 nC, and thermal resistance of 62.5°C/W junction to ambient. The device is ESD protected up to 2 kV (HBM), has a junction temperature range of -55°C to +150°C, and meets UL 94 V-0 flammability ratings. It is halogen-free, RoHS compliant, and suitable for applications requiring low driving requirements and high efficiency. The MSJP11N80A-BP variant is supplied in bulk packaging with 50 pieces per tube.

Suppliers

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Single FETs, MOSFETs - 353-MSJP11N80A-BP-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
353-MSJP11N80A-BP-ND
Single FETs, MOSFETs 353-MSJP11N80A-BP-ND
N-CHANNEL MOSFET, TO-220AB(H)

N-CHANNEL MOSFET, TO-220AB(H)

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Technical Specifications

  DigiKey
Product Category Transistors
Product Number 353-MSJP11N80A-BP-ND
Product Name Single FETs, MOSFETs
Polarity N-Channel
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