The MSJP11N80A is an N-channel Super-Junction MOSFET in a TO-220 package, designed for high-voltage switching applications with a drain-source voltage rating of 800 V and a continuous drain current of 11 A at 25°C. It features a low on-resistance of up to 470 mΩ at Vgs=10 V, a gate charge of 24 nC, and thermal resistance of 62.5°C/W junction to ambient. The device is ESD protected up to 2 kV (HBM), has a junction temperature range of -55°C to +150°C, and meets UL 94 V-0 flammability ratings. It is halogen-free, RoHS compliant, and suitable for applications requiring low driving requirements and high efficiency. The MSJP11N80A-BP variant is supplied in bulk packaging with 50 pieces per tube.
N-CHANNEL MOSFET, TO-220AB(H)
| DigiKey | |
|---|---|
| Product Category | Transistors |
| Product Number | 353-MSJP11N80A-BP-ND |
| Product Name | Single FETs, MOSFETs |
| Polarity | N-Channel |