Micro Commercial Components Corp. Single Bipolar Transistors MPS2907A-AP

Description
Bipolar (BJT) Transistor PNP 60V 600mA 200MHz 625mW Through Hole TO-92
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Description
Bipolar (BJT) Transistor PNP 60V 600mA 200MHz 625mW Through Hole TO-92
Request a Quote
Datasheet
Datasheet Summary
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PNP silicon transistor for general-purpose switching and amplification, packaged in TO-92 with a power dissipation of 0.625W, collector current of -0.6A, and collector-base voltage of -60V. Operating and storage junction temperature ranges from -55°C to +150°C. Features collector-emitter breakdown voltage of -60V, DC current gain (hFE) between 200 and 300, transition frequency of 200MHz, and complies with UL 94 V-0 flammability rating and RoHS standards. Moisture sensitivity level is 1. Available in ammo packing with -AP suffix.

Datasheet Summary
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PNP silicon transistor for general-purpose switching and amplification, packaged in TO-92 with a power dissipation of 0.625W, collector current of -0.6A, and collector-base voltage of -60V. Operating and storage junction temperature ranges from -55°C to +150°C. Features collector-emitter breakdown voltage of -60V, DC current gain (hFE) between 200 and 300, transition frequency of 200MHz, and complies with UL 94 V-0 flammability rating and RoHS standards. Moisture sensitivity level is 1. Available in ammo packing with -AP suffix.

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Single Bipolar Transistors - 353-MPS2907A-APTB-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
353-MPS2907A-APTB-ND
Single Bipolar Transistors 353-MPS2907A-APTB-ND
Bipolar (BJT) Transistor PNP 60V 600mA 200MHz 625mW Through Hole TO-92

Bipolar (BJT) Transistor PNP 60V 600mA 200MHz 625mW Through Hole TO-92

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Technical Specifications

  DigiKey
Product Category Transistors
Product Number 353-MPS2907A-APTB-ND
Product Name Single Bipolar Transistors
Polarity PNP
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