PNP silicon transistor for general-purpose switching and amplification, packaged in TO-92 with a power dissipation of 0.625W, collector current of -0.6A, and collector-base voltage of -60V. Operating and storage junction temperature ranges from -55°C to +150°C. Features collector-emitter breakdown voltage of -60V, DC current gain (hFE) between 200 and 300, transition frequency of 200MHz, and complies with UL 94 V-0 flammability rating and RoHS standards. Moisture sensitivity level is 1. Available in ammo packing with -AP suffix.
Bipolar (BJT) Transistor PNP 60V 600mA 200MHz 625mW Through Hole TO-92
| DigiKey | |
|---|---|
| Product Category | Transistors |
| Product Number | 353-MPS2907A-APTB-ND |
| Product Name | Single Bipolar Transistors |
| Polarity | PNP |