The MIW80N120NT1YHE3 is a 1200V, 80A IGBT in a TO-247AB package, designed for high-speed switching in hard and soft switching applications. It features a maximum junction temperature of 150°C, a positive temperature coefficient, and meets AEC-Q101 qualification. The device has a thermal resistance from junction to case of 0.24°C/W and is halogen-free with a UL 94 V-0 epoxy rating. It supports a pulsed collector current of 240A and has a gate-emitter voltage rating of ±20V. The part is RoHS compliant and features a leads-free finish.
| DigiKey | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | 353-MIW80N120NT1YHE3-BP-ND |
| Product Name | Single IGBTs |
| TJ | -40 to 150 C (-40 to 302 F) |