The MIW75N65AS2Y is an IGBT for hard and soft switching applications in resonant converters, uninterruptible power supplies, and welding converters. It is packaged in a TO-247AB case measuring 20.70-21.30 mm in length, 16.25-16.85 mm in width, and 19.62-20.22 mm in lead spacing. The device supports a 650 V collector-emitter voltage and 85 A continuous collector current at 25°C. Its maximum junction temperature is 175°C, with a thermal resistance from junction to case of 0.35°C/W for the IGBT. The gate-emitter threshold voltage ranges from 3.2 V to 4.8 V. Switching turn-on energy is 3.12-3.25 mJ and turn-off energy is 1.11-1.57 mJ under inductive load. It meets UL 94 V-0 flammability requirements and is RoHS compliant and halogen-free.
IGBT TRENCH FS 650V 85A TO-247AB
| DigiKey | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | 353-MIW75N65AS2Y-BP-ND |
| Product Name | Single IGBTs |
| TJ | -40 to 175 C (-40 to 347 F) |