Micro Commercial Components Corp. Single IGBTs MIW50N65AS2Y-BP

The MIW50N65AS2Y is a 650V, 50A trench field stop IGBT in a TO-247AB package, designed for hard and soft switching applications such as solar converters, uninterruptible power supplies, and welding systems. It supports a maximum junction temperature of 175°C and features a positive temperature coefficient for thermal stability. The device has a collector-emitter saturation voltage of 1.40V at 50A and 25°C, and a gate-emitter threshold voltage between 3.0V and 5.0V. It is RoHS compliant and halogen-free, with an epoxy formulation meeting UL 94 V-0 flammability rating. Thermal resistance from junction to case is 0.53°C/W for the IGBT and 1.05°C/W for the internal diode. The diode exhibits a reverse recovery time of up to 218ns at 150°C. The TO-247AB package dimensions are 20.70-21.30mm in length and 19.62-20.22mm in lead spacing.