Single IGBT with an integrated fast and soft recovery anti-parallel diode, packaged in a TO-247AB case. It has a collector-emitter voltage rating of 1200 V, a continuous collector current of 50 A at 100°C, and a maximum junction temperature of 175°C. The device features a positive temperature coefficient, halogen-free "Green" construction meeting UL 94 V-0 flammability rating, and is RoHS compliant. Thermal resistance from junction to case is 0.32°C/W for the IGBT and 0.65°C/W for the diode. It meets AEC-Q200 qualification standards and is designed for applications including frequency converters, AC and DC servo drive amplifiers, and uninterruptible power supplies.
| DigiKey | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | 353-MIW50N120AT1Y-BP-ND |
| Product Name | Single IGBTs |
| TJ | -40 to 175 C (-40 to 347 F) |