The MIW40N65RA is a 650 V, 40 A trench field stop IGBT in a TO-247AB package, designed for high-frequency switching applications such as medical devices, uninterruptible power supplies, and motion control. It features a maximum junction temperature of 175°C, a short-circuit withstand time of 5 μs, and thermal resistances of 0.49°C/W (junction-to-case) for the IGBT and 1.05°C/W for the diode. The device meets UL 94 V-0 flammability requirements and is RoHS compliant and halogen-free. Its collector-emitter saturation voltage is 1.95 V at 25°C and 40 A, with a gate-emitter threshold voltage range of 4.1 to 6.1 V. Switching characteristics include a turn-off delay time of 124 ns and a turn-off energy of 0.59 mJ at 25°C.
IGBT TRENCH FS 650V 80A TO-247AB
| DigiKey | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | 353-MIW40N65RA-BP-ND |
| Product Name | Single IGBTs |
| TJ | -40 to 175 C (-40 to 347 F) |