The MIW40N120FLAHE3 is a 1200V, 40A IGBT in a TO-247AB package with an integrated fast and soft recovery anti-parallel diode. It operates with a junction temperature range of -40°C to +175°C and features a collector-emitter saturation voltage of up to 2.30V at 150°C. The device has a thermal resistance of 0.35°C/W junction-to-case and is qualified to AEC-Q101. It meets UL 94 V-0 flammability requirements, is halogen-free, and RoHS compliant. The IGBT supports a short-circuit withstand time of 10μs and has a gate-emitter voltage rating of ±20V. The package dimensions are 20.70-21.30mm in length, 16.25-16.85mm in width, and 15.50-16.10mm in height.
IGBT TRENCH FS 1200V 80A TO247AB
| DigiKey | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | 353-MIW40N120FLAHE3-BPTR-ND |
| Product Name | Single IGBTs |
| TJ | -40 to 175 C (-40 to 347 F) |