The MIW40N120-BP is a 1200 V, 40 A trench field stop IGBT in a TO-247-3 package, rated for a junction temperature range of -55°C to +150°C. It features a collector-emitter saturation voltage of 2.4 V at 40 A and 25°C, rising to 2.3 V at 150°C, with a positive temperature coefficient. The device has a thermal resistance of 0.45°C/W from junction to case and 40°C/W from junction to ambient. It supports a short circuit withstand time of 10 μs and meets UL 94 V-0 flammability and RoHS standards. The package dimensions are 20.00-22.00 mm in length, 15.20-16.20 mm in width, and 4.70-5.30 mm in lead height.
IGBT Trench Field Stop 1200V 80A 277W Through Hole TO-247-3
| DigiKey | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | 353-MIW40N120-BP-ND |
| Product Name | Single IGBTs |
| TJ | -55 to 150 C (-67 to 302 F) |