The MIW30N65FA is a 650V, 30A trench field-stop IGBT in a TO-247AB package, designed for hard and soft switching applications. It has a collector-emitter saturation voltage of up to 2.4V at 30A and 150°C, a gate-emitter threshold voltage between 4.5V and 5.5V, and a thermal resistance of 0.8°C/W from junction to case. The maximum operating junction temperature is 175°C, and it withstands short circuits for 5μs. It is halogen-free, meets UL 94 V-0 flammability rating, and is RoHS compliant. Turn-on energy reaches 1.35mJ and turn-off energy reaches 0.45mJ under specified switching conditions.
IGBT TRENCH FS 650V 60A TO-247AB
| DigiKey | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | 353-MIW30N65FA-BP-ND |
| Product Name | Single IGBTs |
| TJ | -40 to 175 C (-40 to 347 F) |