Micro Commercial Components Corp. Single IGBTs MIB30N65AT1Y-TP

Description
IGBT DISCRETE,D2-PAK
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Description
IGBT DISCRETE,D2-PAK
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Datasheet
Datasheet Summary
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MIB30N65AT1Y-TP is a 650 V, 30 A insulated gate bipolar transistor in a D2-PAK package, designed for soft switching applications such as motor drive inverters and air conditioning systems. It features a maximum junction temperature of 175°C, a positive temperature coefficient, and short circuit withstand time of 5 µs. The device is RoHS compliant, halogen-free, and meets UL 94 V-0 flammability rating. Thermal resistance from junction to case is 1.1 °C/W for the IGBT and 1.8 °C/W for the diode. The package dimensions are 9.40 mm × 10.60 mm × 4.80 mm. The part is supplied in tape and reel packaging, 800 pcs/reel.

Datasheet Summary
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MIB30N65AT1Y-TP is a 650 V, 30 A insulated gate bipolar transistor in a D2-PAK package, designed for soft switching applications such as motor drive inverters and air conditioning systems. It features a maximum junction temperature of 175°C, a positive temperature coefficient, and short circuit withstand time of 5 µs. The device is RoHS compliant, halogen-free, and meets UL 94 V-0 flammability rating. Thermal resistance from junction to case is 1.1 °C/W for the IGBT and 1.8 °C/W for the diode. The package dimensions are 9.40 mm × 10.60 mm × 4.80 mm. The part is supplied in tape and reel packaging, 800 pcs/reel.

Suppliers

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Product
Description
Supplier Links
Single IGBTs - 353-MIB30N65AT1Y-TPTR-ND - DigiKey
Thief River Falls, MN, United States
IGBT DISCRETE,D2-PAK

IGBT DISCRETE,D2-PAK

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Technical Specifications

  DigiKey
Product Category Insulated Gate Bipolar Transistors (IGBT)
Product Number 353-MIB30N65AT1Y-TPTR-ND
Product Name Single IGBTs
TJ -40 to 175 C (-40 to 347 F)
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