MIB30N65AT1Y-TP is a 650 V, 30 A insulated gate bipolar transistor in a D2-PAK package, designed for soft switching applications such as motor drive inverters and air conditioning systems. It features a maximum junction temperature of 175°C, a positive temperature coefficient, and short circuit withstand time of 5 µs. The device is RoHS compliant, halogen-free, and meets UL 94 V-0 flammability rating. Thermal resistance from junction to case is 1.1 °C/W for the IGBT and 1.8 °C/W for the diode. The package dimensions are 9.40 mm × 10.60 mm × 4.80 mm. The part is supplied in tape and reel packaging, 800 pcs/reel.
| DigiKey | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | 353-MIB30N65AT1Y-TPTR-ND |
| Product Name | Single IGBTs |
| TJ | -40 to 175 C (-40 to 347 F) |