MCW099N60SH-BP is a 600 V N-channel MOSFET in a TO-247 package, designed for high-voltage switching applications with reduced switching and conduction losses. The device features super junction technology, a maximum continuous drain current of 30.5 A at 25°C, and a drain-source on-resistance of 85 to 103 mΩ at 10 V gate voltage. It has a total gate charge of 56.5 nC, a thermal resistance of 40°C/W junction-to-ambient, and operates from -55°C to +150°C. The package dimensions are 20.00-22.00 mm in length, 15.20-16.20 mm in width, and 4.70-5.30 mm in height. The part is RoHS compliant and halogen-free, with epoxy meeting UL 94 V-0 flammability rating.
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MCW099N60SH-BP is a 600 V N-channel MOSFET in a TO-247 package, designed for high-voltage switching applications with reduced switching and conduction losses. The device features super junction technology, a maximum continuous drain current of 30.5 A at 25°C, and a drain-source on-resistance of 85 to 103 mΩ at 10 V gate voltage. It has a total gate charge of 56.5 nC, a thermal resistance of 40°C/W junction-to-ambient, and operates from -55°C to +150°C. The package dimensions are 20.00-22.00 mm in length, 15.20-16.20 mm in width, and 4.70-5.30 mm in height. The part is RoHS compliant and halogen-free, with epoxy meeting UL 94 V-0 flammability rating.
