Micro Commercial Components Corp. Single FETs, MOSFETs MCU9D1N10Y-TP

The MCU9D1N10Y is an N-channel MOSFET in a DPAK (TO-252) package, designed for high-efficiency switching applications. It features a maximum drain-source voltage of 100 V, continuous drain current of 56 A at 25°C, and a very low on-resistance with a typical value of 7.3 mΩ at V GS=10 V and I D=20 A. The device has a junction temperature range of -55°C to +175°C, a thermal resistance of 52.5°C/W from junction to ambient, and delivers 110 mJ of avalanche energy. The package dimensions are 6.20 mm × 6.70 mm × 2.40 mm, and the part is RoHS compliant and halogen-free. Its gate threshold voltage ranges from 1.5 to 2.9 V, and it includes a body diode with a forward voltage of 1.2 V at 20 A.