Micro Commercial Components Corp. Single FETs, MOSFETs MCU80N06AHE3-TP

The MCU80N06AHE3 is an N-channel MOSFET featuring Split Gate Trench technology, rated for a drain-source voltage of 60 V and a continuous drain current of 80 A at 25°C. It is packaged in a DPAK (TO-252) case with dimensions of 9.80 to 10.40 mm in length, 6.00 to 6.20 mm in width, and 2.90 mm in height for the lead length. The device operates within a junction temperature range of -55°C to +150°C, has a thermal resistance of 50°C/W from junction to ambient, and is AEC-Q101 qualified. It is RoHs compliant, halogen free, and meets UL 94 V-0 flammability rating. The total gate charge is 31 nC, and the on-resistance is 5.5 to 10 mΩ at 10 V gate voltage. The device supports a single pulse avalanche energy of 144 mJ.