MCU3D3N06YL-TP is an N-channel MOSFET in a DPAK (TO-252) package, designed for switching applications. It has a drain-source voltage rating of 60 V, a continuous drain current of 99 A at 100°C, and a pulsed drain current of 628 A. The device features split gate trench technology, operates from -55°C to 150°C, and has a thermal resistance of 0.9°C/W junction-to-case and 45°C/W junction-to-ambient. It is RoHS compliant, halogen-free, and meets UL 94 V-0 flammability standards. The DPAK dimensions are 6.20 mm x 6.70 mm x 2.40 mm. The -TP suffix indicates tape and reel packaging.
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MCU3D3N06YL-TP is an N-channel MOSFET in a DPAK (TO-252) package, designed for switching applications. It has a drain-source voltage rating of 60 V, a continuous drain current of 99 A at 100°C, and a pulsed drain current of 628 A. The device features split gate trench technology, operates from -55°C to 150°C, and has a thermal resistance of 0.9°C/W junction-to-case and 45°C/W junction-to-ambient. It is RoHS compliant, halogen-free, and meets UL 94 V-0 flammability standards. The DPAK dimensions are 6.20 mm x 6.70 mm x 2.40 mm. The -TP suffix indicates tape and reel packaging.
