Micro Commercial Components Corp. Single FETs, MOSFETs MCU013P06LHE3-TP

P-channel MOSFET in DPAK (TO-252) package, rated for -60 V drain-source voltage and -70 A continuous drain current at 25°C, with a maximum junction temperature of 175°C. The device features trench power MOSFET technology, AEC-Q101 qualification, and is RoHS compliant. Thermal resistance is 49°C/W junction-to-ambient and 1.1°C/W junction-to-case. Power dissipation is 136 W. The package dimensions are 10.40 mm maximum length, 6.70 mm maximum width, and 2.40 mm maximum height. Drain-source on-resistance is 10.5 mΩ at -10 V gate-source voltage and -35 A drain current.