Micro Commercial Components Corp. Single FETs, MOSFETs MCTL3D2N10YH-TP

N-channel MOSFET with split gate trench technology in a TOLL-8L package, rated for 100 V drain-source voltage and continuous drain current of 195 A at 25°C. The device has a drain-source on-resistance of 2.4 to 3.2 mΩ at 10 V gate-source voltage and 50 A drain current. Thermal resistance is 42°C/W junction-to-ambient and 0.58°C/W junction-to-case. Maximum junction and storage temperature range is -55°C to +175°C. The part is RoHS compliant, halogen-free, and meets UL 94 V-0 flammability rating. Pulsed drain current is 780 A and single pulsed avalanche energy is 684 mJ.