Micro Commercial Components Corp. FET, MOSFET Arrays MCQD04N06-TP

Description
MOSFET 2N-CH 60V 4A 8SOP
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Description
MOSFET 2N-CH 60V 4A 8SOP
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Datasheet
Datasheet Summary
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The MCQD04N06-TP is a dual N-channel MOSFET in an SOP-8 package, designed for low-voltage switching applications. It has a drain-source voltage rating of 60 V and a continuous drain current of 4 A at 25°C, reducing to 2.5 A at 100°C. The device features a drain-source on-resistance of 55 to 90 mΩ, depending on gate voltage, and a total power dissipation of 1.7 W. The junction temperature ranges from -55°C to +150°C, with a thermal resistance of 75°C/W. It is RoHS compliant, halogen-free, and meets UL 94 V-0 flammability standards. The package dimensions are 6.50 mm by 4.61 mm, with a lead pitch of 1.27 mm.

Datasheet Summary
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The MCQD04N06-TP is a dual N-channel MOSFET in an SOP-8 package, designed for low-voltage switching applications. It has a drain-source voltage rating of 60 V and a continuous drain current of 4 A at 25°C, reducing to 2.5 A at 100°C. The device features a drain-source on-resistance of 55 to 90 mΩ, depending on gate voltage, and a total power dissipation of 1.7 W. The junction temperature ranges from -55°C to +150°C, with a thermal resistance of 75°C/W. It is RoHS compliant, halogen-free, and meets UL 94 V-0 flammability standards. The package dimensions are 6.50 mm by 4.61 mm, with a lead pitch of 1.27 mm.

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FET, MOSFET Arrays - 353-MCQD04N06-TPTR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
353-MCQD04N06-TPTR-ND
FET, MOSFET Arrays 353-MCQD04N06-TPTR-ND
MOSFET 2N-CH 60V 4A 8SOP

MOSFET 2N-CH 60V 4A 8SOP

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Technical Specifications

  DigiKey
Product Category Transistors
Product Number 353-MCQD04N06-TPTR-ND
Product Name FET, MOSFET Arrays
Package Type "8-SOIC (0.154"", 3.90mm Width)"
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