The MCQD04N06-TP is a dual N-channel MOSFET in an SOP-8 package, designed for low-voltage switching applications. It has a drain-source voltage rating of 60 V and a continuous drain current of 4 A at 25°C, reducing to 2.5 A at 100°C. The device features a drain-source on-resistance of 55 to 90 mΩ, depending on gate voltage, and a total power dissipation of 1.7 W. The junction temperature ranges from -55°C to +150°C, with a thermal resistance of 75°C/W. It is RoHS compliant, halogen-free, and meets UL 94 V-0 flammability standards. The package dimensions are 6.50 mm by 4.61 mm, with a lead pitch of 1.27 mm.
MOSFET 2N-CH 60V 4A 8SOP
| DigiKey | |
|---|---|
| Product Category | Transistors |
| Product Number | 353-MCQD04N06-TPTR-ND |
| Product Name | FET, MOSFET Arrays |
| Package Type | "8-SOIC (0.154"", 3.90mm Width)" |