The MCP7D4N15Y is an N-channel MOSFET built with Split Gate Trench technology, housed in a TO-220AB(B) package measuring 16.10 mm in length, 6.85 mm in width, and 5.08 mm in height for the lead spacing. It has a drain-source voltage rating of 150 V and a continuous drain current of 119 A at 25°C, with a maximum power dissipation of 223 W. The device features a junction-to-ambient thermal resistance of 33°C/W and a junction-to-case thermal resistance of 0.56°C/W. Its gate-source voltage is rated at ±20 V, and it operates over a temperature range of -55°C to +150°C. The MOSFET is halogen-free, RoHS compliant, and meets UL 94 V-0 flammability standards.
N-CHANNEL MOSFET,TO-220AB(B)
| DigiKey | |
|---|---|
| Product Category | Transistors |
| Product Number | 353-MCP7D4N15Y-BP-ND |
| Product Name | Single FETs, MOSFETs |
| Polarity | N-Channel |