The MCP2D6N10Y is an N-channel MOSFET with a 100 V drain-source voltage rating, designed for high-current switching applications. It is packaged in a TO-220AB(H) case with dimensions of 15.10 to 16.10 mm in length, 12.75 to 13.80 mm in width, and 4.37 to 4.77 mm in height. The device features a maximum continuous drain current of 240 A at 25°C and a pulsed drain current of 960 A, with a total power dissipation of 208 W and a thermal resistance of 0.6°C/W from junction to case. It has a gate threshold voltage between 2 V and 4 V, and a typical on-resistance of 2.3 mΩ at 10 V gate-source voltage. The MOSFET is RoHS compliant, halogen-free, and meets UL 94 V-0 flammability standards. Its operating and storage temperature range is -55°C to +150°C.
N-CHANNEL MOSFET,TO-220AB(H)
| DigiKey | |
|---|---|
| Product Category | Transistors |
| Product Number | 353-MCP2D6N10Y-BP-ND |
| Product Name | Single FETs, MOSFETs |
| Polarity | N-Channel |