P-channel MOSFET in TO-220AB(H) package, rated for -100 V drain-source voltage and ±20 V gate-source voltage, with a continuous drain current of -23 A at 25°C and -14 A at 100°C. Maximum power dissipation is 52 W. Thermal resistance is 75°C/W junction-to-ambient and 2.4°C/W junction-to-case. Features Split Gate Trench MOSFET technology, halogen-free 'Green' construction, UL 94 V-0 epoxy, and RoHS compliance. Operating junction temperature range is -55°C to +150°C. Meets AEC-Q200 qualification.
P-CHANNEL MOSFET,TO-220AB(H)
| DigiKey | |
|---|---|
| Product Category | Transistors |
| Product Number | 353-MCP053P10Y-BP-ND |
| Product Name | Single FETs, MOSFETs |