Micro Commercial Components Corp. Single FETs, MOSFETs MCG30N10Y-TP

Description
MOSFET N-CH DFN3333
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Description
MOSFET N-CH DFN3333
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Datasheet
Datasheet Summary
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MCG30N10Y is an N-channel MOSFET using Split Gate Trench technology, packaged in a DFN3333 case measuring 3.20 to 3.30 mm in both length and width. It has a drain-source voltage rating of 100 V, continuous drain current of 30 A, and maximum power dissipation of 20.8 W. The thermal resistance from junction to case is 6°C/W, with an operating junction temperature range of -55°C to +150°C. The device is RoHS compliant, halogen-free, and meets UL 94 V-0 flammability rating. The DFN3333 package supports surface mounting on minimum footprint pad area.

Datasheet Summary
Powered by GS/AI

MCG30N10Y is an N-channel MOSFET using Split Gate Trench technology, packaged in a DFN3333 case measuring 3.20 to 3.30 mm in both length and width. It has a drain-source voltage rating of 100 V, continuous drain current of 30 A, and maximum power dissipation of 20.8 W. The thermal resistance from junction to case is 6°C/W, with an operating junction temperature range of -55°C to +150°C. The device is RoHS compliant, halogen-free, and meets UL 94 V-0 flammability rating. The DFN3333 package supports surface mounting on minimum footprint pad area.

Suppliers

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Product
Description
Supplier Links
Single FETs, MOSFETs - 353-MCG30N10Y-TPTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
353-MCG30N10Y-TPTR-ND
Single FETs, MOSFETs 353-MCG30N10Y-TPTR-ND
MOSFET N-CH DFN3333

MOSFET N-CH DFN3333

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Technical Specifications

  DigiKey
Product Category Transistors
Product Number 353-MCG30N10Y-TPTR-ND
Product Name Single FETs, MOSFETs
Polarity N-Channel
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